A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• analysis of an isolated silicon nanocrystal from this work is shown in Figure 4c. The authors highlighted that the demonstration presents a promising new technique for the fabrication of single-electron transistor devices. This work is also closely related to the magnetic property tuning by Röder et al

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• between the SiO2 layers and perpendicular to the incident Ne+ beam. Keywords: helium ion microscopy; ion beam mixing; Monte Carlo simulations; phase separation; single electron transistor; Introduction Silicon has been the main material in the semiconductor industry for almost all use cases with the

• particular, various groups have demonstrated the usage of a Si NC embedded in an SiO2 matrix as a Coulomb island for a single electron transistor (SET) device [7][8][9]. However, so far Si NC-based SET devices lack either the ability of room-temperature operation or the compatibility to complimentary metal

Spatial Rabi oscillations between Majorana bound states and quantum dots

• Jun-Hui Zheng,
• Dao-Xin Yao and
• Zhi Wang

Beilstein J. Nanotechnol. 2018, 9, 1527–1535, doi:10.3762/bjnano.9.143

• the occupation states of the quantum dot, which can be measured by probing the electron occupation on the quantum dot. The measurement of the electron occupation state of the quantum dot has been achieved with the single-electron transistor [27][41], which is a routine technique in the study of charge